A Lumped Transient Thermal Model for Self-Heating in Mosfets.

Sabry, Mohamed Nabil Saad El-Din; Fikry, W.; Abdel Salam, Kh.; Awad, Mohamed Mahmoud Moustafa; Nasser, A. I.

doi:10.21608/bfemu.2021.158428

A Lumped Transient Thermal Model for Self-Heating in Mosfets.

Document Type : Research Studies

Authors

¹ Mechanical Power Engineering Department., Faculty of Engineering., El-Mansoura University.,Mansoura., Egypt.

² Engineering Physics Math Department., Ain Shams University., (on leave to Mentor Graphics Egypt).

³ 10th of Ramadan Technological Institute., Egypt.

⁴ 10 of Ramadan Technological Institute., Egypt.

10.21608/bfemu.2021.158428

Abstract

Both static and dynamic effects related to self-heating in MOSFETs (Metal Oxyde-Silicon Field Effect Transistor) are studied in order to construct an adequate compact thermal model. An available 2D electrical device simulator in addition to a simple 2D finite difference code for the heat equation are used as analysis tools, These tools are used both to justify the proposed model topology as well as to extract model parameters. Both static and dynamic effects predicted by the model are compared with existing experimental results.

Main Subjects