Large area polycrystalline, silicon substrates were prepared by the unidirectional solidification of metallurgical silicon on graphite. The silicon was firest purified by continuous heating with aqua-regia and then gettered with p < sub>2o5 at 1050 oC. Substrates had elongated silicon grains, up to several centimeters long. X-ray diffraction and spreading resistance measurements showed that the substrates were 0.03 0hm. Cm, n-type of (110) orientation- p – n junction solar cells were fabricated by chemical vapor deposition of a Ti/Ag layer through a metal mask. A thin film of Sno2 was used as an AR coating. The cell efficiency under AM1 conditions, open circuit voltage, short circuit current, and fill factor were measured to be 9.75 %, 568 mv, 23 mA/cm2, and 0.78, respectively, for a 30 cm2 cell with AR coating. Heat treatment in hydrogen at 900 oC was found to improve the cell efficiency by 15 – 20 % .
Abderrassoul, R. (2021). Large-Area Polycrystalline Silicon Substrates Using Unidirectionally Solidified Metallurgical-Grade Silicon for Solar Cell Applications.. MEJ- Mansoura Engineering Journal, 14(2), 63-78. doi: 10.21608/bfemu.2021.172283
MLA
Roshdy A. Abderrassoul. "Large-Area Polycrystalline Silicon Substrates Using Unidirectionally Solidified Metallurgical-Grade Silicon for Solar Cell Applications.". MEJ- Mansoura Engineering Journal, 14, 2, 2021, 63-78. doi: 10.21608/bfemu.2021.172283
HARVARD
Abderrassoul, R. (2021). 'Large-Area Polycrystalline Silicon Substrates Using Unidirectionally Solidified Metallurgical-Grade Silicon for Solar Cell Applications.', MEJ- Mansoura Engineering Journal, 14(2), pp. 63-78. doi: 10.21608/bfemu.2021.172283
VANCOUVER
Abderrassoul, R. Large-Area Polycrystalline Silicon Substrates Using Unidirectionally Solidified Metallurgical-Grade Silicon for Solar Cell Applications.. MEJ- Mansoura Engineering Journal, 2021; 14(2): 63-78. doi: 10.21608/bfemu.2021.172283
)
View on SCiNiTO