Single Electron Tunneling (SET) technology introduces more potential for feature size reduction compared with well-established silicon-based CMOS technology. The SET technology offers the ability to control the motion of individual electrons in the designed circuits, In this paper some of the basic Single Electron Circuits (SEC) found in the literature is reviewed, The complete schematic diagrams of these basic SEC (inc parameters for used devices) along with the corresponding simulation results (using SIMON 2.0) of these SEC are included. Finally, a novel XOR SEC, with detailed schematic and simulation results, is presented The developed XOR SEC can be used as a half-adder SEC.
Rehan, S. (2021). A Novel XOR Gate Using Single Electron Tunneling Technology.. MEJ- Mansoura Engineering Journal, 31(4), 1-8. doi: 10.21608/bfemu.2021.198684
MLA
Sameh Rehan. "A Novel XOR Gate Using Single Electron Tunneling Technology.". MEJ- Mansoura Engineering Journal, 31, 4, 2021, 1-8. doi: 10.21608/bfemu.2021.198684
HARVARD
Rehan, S. (2021). 'A Novel XOR Gate Using Single Electron Tunneling Technology.', MEJ- Mansoura Engineering Journal, 31(4), pp. 1-8. doi: 10.21608/bfemu.2021.198684
VANCOUVER
Rehan, S. A Novel XOR Gate Using Single Electron Tunneling Technology.. MEJ- Mansoura Engineering Journal, 2021; 31(4): 1-8. doi: 10.21608/bfemu.2021.198684
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